2SC5830 Specs and Replacement
Type Designator: 2SC5830
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 8 A
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-220F
2SC5830 Substitution
- BJT ⓘ Cross-Reference Search
2SC5830 datasheet
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Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip- 1 ment for Ultraminiature leadless package 0.39+0.01 1.00 0.05 -0.03 0.6 mm 1.0 mm (height 0.39 mm) 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings ... See More ⇒
Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm 1.0 mm (height 0.39 mm) 0.39+0.01 1.00 0.05 -0.03 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit ... See More ⇒
Detailed specifications: D209L, FJAF6916, BU3150, 2SC5793, 2SB1685, 2SB1686, 2SB1687, 2SC5586, A42, 2SC5924, STD03N, STD03P, 2SC4458, FJX945, 2SC1070B, 2SC1545M, 2SC1741AS
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