2SC5830 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5830  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 450 V

Corriente del colector DC máxima (Ic): 8 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 95 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO-220F

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2SC5830 datasheet

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2SC5830

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2SC5830

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2SC5830

Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip- 1 ment for Ultraminiature leadless package 0.39+0.01 1.00 0.05 -0.03 0.6 mm 1.0 mm (height 0.39 mm) 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings

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2SC5830

Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm 1.0 mm (height 0.39 mm) 0.39+0.01 1.00 0.05 -0.03 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit

Otros transistores... D209L, FJAF6916, BU3150, 2SC5793, 2SB1685, 2SB1686, 2SB1687, 2SC5586, 2SD1555, 2SC5924, STD03N, STD03P, 2SC4458, FJX945, 2SC1070B, 2SC1545M, 2SC1741AS