All Transistors. 2SC4910 Datasheet

 

2SC4910 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4910

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 38 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: FLP

2SC4910 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4910 Datasheet (PDF)

1.1. 2sc4910.pdf Size:93K _sanyo

2SC4910
2SC4910

Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Condi

4.1. 2sc4915.pdf Size:319K _toshiba

2SC4910
2SC4910

2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, If Amplifier Applications • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emit

4.2. 2sc4919.pdf Size:99K _sanyo

2SC4910
2SC4910

Ordering number:EN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SC4919- unit:mm applied sets to be made smaller and slimmer. 2106A Small output capacitance. [2SC4909] Low collector-to-emitter saturation voltage. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5

 4.3. 2sc4913.pdf Size:40K _hitachi

2SC4910
2SC4910

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.4. 2sc4916.pdf Size:100K _no

2SC4910
2SC4910

 4.5. 2sc4916.pdf Size:137K _inchange_semiconductor

2SC4910
2SC4910

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 DESCRIPTION ·With TO-3P(H)IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified ou

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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