2SC4910 Datasheet. Specs and Replacement
Type Designator: 2SC4910 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 38 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: FLP
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2SC4910 Substitution
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2SC4910 datasheet
Ordering number EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions On-chip emitter ballast resistors. unit mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector 3 Base 2.5 2.5 SANYO FLP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol ... See More ⇒
2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf ![]()
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2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emit... See More ⇒
Ordering number EN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SC4919- unit mm applied sets to be made smaller and slimmer. 2106A Small output capacitance. [2SC4909] Low collector-to-emitter saturation voltage. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 ... See More ⇒
Detailed specifications: 2SC4890, 2SC4891, 2SC4892, 2SC4898, 2SC4899, 2SC4900, 2SC4901, 2SC4909, 2N3055, 2SC4919, 2SC4920, 2SC4921, 2SC4922, 2SC4926, 2SC4931, 2SC4937, 2SC4942
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