2SC4942 Datasheet and Replacement
Type Designator: 2SC4942
SMD Transistor Code: AA1_AA2_AA3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
2SC4942 Substitution
2SC4942 Datasheet (PDF)
2sc4942.pdf

DATA SHEETSILICON TRANSISTORS2SC4942NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm)voltage switching. This transistor is ideal for use in switchingdevices such as switching regulators and DC/DC converters.FEATURES New package with dimensions in between those of s
2sc4942.pdf

SMD Type TransistorsNPN Transistors2SC49421.70 0.1 Features High voltage Fast switching speed0.42 0.10.46 0.1 Complementary transistor with the 2SA18711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 600 V Emitter - Base Voltage VEBO 7
2sc4944.pdf

2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4944 Audio Frequency General Purpose Amplefier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1873 Absolut
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
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