All Transistors. 2SC4965 Datasheet

 

2SC4965 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4965
   SMD Transistor Code: YV-
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 12 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: CMPAK

 2SC4965 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4965 Datasheet (PDF)

 ..1. Size:14K  hitachi
2sc4965.pdf

2SC4965 2SC4965

2SC4965Silicon NPN EpitaxialADE-208-0061st. EditionApplicationVHF / UHF RF switchFeatures Low Ron and high performance for RF switch. Capable of high density mounting.Outline2SC4965Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8 VEmitter to base voltage VEBO 3 VCollector cu

 8.2. Size:37K  panasonic
2sc4968.pdf

2SC4965 2SC4965

Transistor2SC4968Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V 1.27 1.27Collector to emitter voltage VCEO 10 VEmitte

 8.3. Size:41K  panasonic
2sc4968 e.pdf

2SC4965 2SC4965

Transistor2SC4968Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V 1.27 1.27Collector to emitter voltage VCEO 10 VEmitte

 8.4. Size:58K  panasonic
2sc4960.pdf

2SC4965 2SC4965

Power Transistors2SC4960, 2SC4960ASilicon NPN triple diffusion planar typeFor power switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw

 8.5. Size:35K  hitachi
2sc4964.pdf

2SC4965 2SC4965

2SC4964Silicon NPN EpitaxialADE-208-0051st. EditionApplicationVHF / UHF RF switchFeatures Low Ron and high performance for RF switch. Capable of high density mounting.OutlineMPAK311. Emitter2. Base23. Collector2SC4964Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8

 8.6. Size:153K  jmnic
2sc4963.pdf

2SC4965 2SC4965

JMnic Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION With TO-3PFM package High breakdown voltage High speed switching Built-in damper diode APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 Emitter

 8.7. Size:892K  kexin
2sc4964.pdf

2SC4965 2SC4965

SMD Type TransistorsNPN Transistors2SC4964SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=8V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

 8.8. Size:189K  inchange semiconductor
2sc4963.pdf

2SC4965 2SC4965

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4963DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 8.9. Size:185K  inchange semiconductor
2sc4960.pdf

2SC4965 2SC4965

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4960DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 900V(Min)(BR)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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