2SC5052 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5052
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: 2-7D2A
2SC5052 Transistor Equivalent Substitute - Cross-Reference Search
2SC5052 Datasheet (PDF)
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5053.pdf
2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / MPT3IB = 500mA / 50mA 2) PC=2W (on 40400.7mm ceramic board) 3) Complements the 2SA1900 (1)Base(2)Collector (3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitVCBO 60 VCollector-b
2sa1900 2sc5053.pdf
2SA1900TransistorsTransistors2SC5053(96-115-B352)(96-196-D352)297Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl
2sc5050.pdf
2SC5050Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK311. Emitter2. Base23. Collector2SC5050Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect
2sc5051.pdf
2SC5051Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC5051Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollec
2sc5053.pdf
SMD Type TransistorsNPN Transistors2SC5053SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V Complementary to 2SA19000.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50
2sc5050.pdf
SMD Type TransistorsNPN Transistors2SC5050SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect
2sc5051.pdf
SMD Type TransistorsNPN Transistors2SC5051 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=8V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 8 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 50 mA
2sc5053r.pdf
2SC5053RNPN-Silicon General use Transistors1W 1.5A25V 4ApplicationsCan be used for switching and amplifying in various electrical and electronic circuit. 1 2 3 SOT-89 Maximum ratingsParameters Symbol Rating UnitMarking V VCEO 25Collector-emitter voltage (IB=0) 2SC5053R=GDVCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
