2SC5142 Datasheet and Replacement

   Type Designator: 2SC5142
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.7 MHz
   Collector Capacitance (Cc): 290 pF
   Forward Current Transfer Ratio (hFE), MIN: 4.5
   Noise Figure, dB: -
   Package: 2-21F2A

2SC5142 Substitution

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2SC5142 Datasheet (PDF)

..1. Size:204K toshiba
2sc5142.pdf pdf_icon

8.1. Size:205K toshiba
2sc5148.pdf pdf_icon

8.2. Size:193K toshiba
2sc5149.pdf pdf_icon

8.3. Size:191K toshiba
2sc5143.pdf pdf_icon

8.4. Size:206K toshiba
2sc5144.pdf pdf_icon

8.5. Size:51K rohm
2sc5147.pdf pdf_icon

2SC5147TransistorsMedium Power Transistor(Chroma Output) (300V, 0.1A)2SC5147 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = 300V)2) Low collector output capacitance.10.0 4.5 (Typ.3pF at VCB = 30V)3.2 2.8 3) Wide SOA. (safe operating area)4) Ideal for color TV chroma output and amplification of1.21.3 video signals.0.80.752.54

8.6. Size:65K panasonic
2sc5145.pdf pdf_icon

Power Transistors2SC5145Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features High-speed switching High collector to base voltage VCBO1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circu

8.7. Size:60K hitachi
2sc5140.pdf pdf_icon

2SC5140Silicon NPN EpitaxialADE-208-227A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YH.Attention: This device is very sensitive to ele

8.8. Size:62K hitachi
2sc5141.pdf pdf_icon

2SC5141Silicon NPN EpitaxialADE-208-228A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 5.8 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YN.Attention: This device is very sensitive to e

8.9. Size:264K foshan
2sc5147 3da5147.pdf pdf_icon

2SC5147(3DA5147) NPN /SILICON NPN TRANSISTOR Purpose: Ideal for Color TV chroma output and amplification of video signals. : Features: High breakdown voltage,low collector output capacitance,wide SOA. /Absolute maxim

8.10. Size:220K inchange semiconductor
2sc5148.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC5148DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

8.11. Size:220K inchange semiconductor
2sc5149.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC5149DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution displaycolor TVHigh speed switching applicationsABSOLUT

8.12. Size:181K inchange semiconductor
2sc5143.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5143DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display&colo

8.13. Size:169K inchange semiconductor
2sc5147.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5147DESCRIPTIONHigh breakdown voltage(BVceo=300V).Low collector output capacitance(Typ.3pF@Vce=30V).Wide SOA(safe operating area)Ideal for color TV chroma output and amplificationof video signals100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

8.14. Size:211K inchange semiconductor
2sc5144.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC5144DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBO

Datasheet: 2SC5127 , 2SC5127A , 2SC5136 , 2SC5137 , 2SC5138 , 2SC5139 , 2SC5140 , 2SC5141 , MPSA42 , 2SC5144 , 2SC5145 , 2SC5147 , 2SC5155 , 2SC5168 , 2SC5169 , 2SC5175 , 2SC5177 .