All Transistors. 2SC5144 Equivalents Search

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isc Silicon NPN Power Transistor 2SC5144 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO... See More ⇒

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2SC5147 Transistors Medium Power Transistor (Chroma Output) (300V, 0.1A) 2SC5147 Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance. 10.0 4.5 (Typ.3pF at VCB = 30V) 3.2 2.8 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of 1.2 1.3 video signals. 0.8 0.75 2.54 ... See More ⇒

Power Transistors 2SC5145 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features High-speed switching High collector to base voltage VCBO 1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circu... See More ⇒

2SC5140 Silicon NPN Epitaxial ADE-208-227A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YH . Attention This device is very sensitive to ele... See More ⇒

2SC5141 Silicon NPN Epitaxial ADE-208-228A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 5.8 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YN . Attention This device is very sensitive to e... See More ⇒

2SC5147(3DA5147) NPN /SILICON NPN TRANSISTOR Purpose Ideal for Color TV chroma output and amplification of video signals. Features High breakdown voltage,low collector output capacitance,wide SOA. /Absolute maxim... See More ⇒

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isc Silicon NPN Power Transistor 2SC5149 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display color TV High speed switching applications ABSOLUT... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5143 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display& colo... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5147 DESCRIPTION High breakdown voltage(BVceo=300V). Low collector output capacitance(Typ.3pF@Vce=30V). Wide SOA(safe operating area) Ideal for color TV chroma output and amplification of video signals 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... See More ⇒