All Transistors. 2SC5169 Datasheet

 

2SC5169 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC5169
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -

 2SC5169 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC5169 Datasheet (PDF)

 ..1. Size:113K  isahaya
2sc5169.pdf

2SC5169
2SC5169

http://www.idc-com.co.jp 854-0065 6-41

 8.1. Size:74K  rohm
2sc5161.pdf

2SC5169
2SC5169

2SC5161TransistorsHigh-Voltage Switching Transistor(400V, 2A)2SC5161 External dimensions (Units : mm) Features1) Low VCE(sat).VCE(sat) = 0.15V (Typ.)2.3+0.26.50.2-0.1C0.5(Ic / IB =1A / 0.2A)5.1+0.20.50.1-0.12) High breakdown voltage.BVCEO = 400V3) Fast switching.0.650.10.75tf 1.0s (Ic = 0.8A)0.90.50.12.30.2 2.30.21.00.2 S

 8.2. Size:120K  isahaya
2sc5168.pdf

2SC5169
2SC5169

http://www.idc-com.co.jp 854-0065 6-41

 8.3. Size:182K  tysemi
2sc5161.pdf

2SC5169
2SC5169

SMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SC5161TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.8Features5.30-0.2 0.50-0.7Low VCE(sat).VCE(sat) = 0.15V (Typ.),IC / IB =1A/ 0.2AHigh breakdown voltage.VCEO =400V0.127+0.1 max0.80-0.1F

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC509Y

 

 
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