2SC5179 Datasheet. Specs and Replacement

Type Designator: 2SC5179  📄📄 

SMD Transistor Code: T84

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.03 W

Maximum Collector-Base Voltage |Vcb|: 5 V

Maximum Collector-Emitter Voltage |Vce|: 3 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10000 MHz

Collector Capacitance (Cc): 0.4 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: T84

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2SC5179 datasheet

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2SC5179

DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS S21e 2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.1 0.1 Small Mini-Mold package 1.25 0.1 EIAJ SC-... See More ⇒

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2SC5179

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO... See More ⇒

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2SC5179

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2SC5179

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Detailed specifications: 2SC5145, 2SC5147, 2SC5155, 2SC5168, 2SC5169, 2SC5175, 2SC5177, 2SC5178, BD139, 2SC5180, 2SC5181, 2SC5182, 2SC5183, 2SC5184, 2SC5185, 2SC5186, 2SC5190

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