2SC5317 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2SC5317 Datasheet. Specs and Replacement

Type Designator: 2SC5317 📄📄

SMD Transistor Code: MT

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 8 V

Maximum Collector-Emitter Voltage |Vce|: 5 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: 2-2H1A

2SC5317 Substitution

- BJT ⓘ Cross-Reference Search

2SC5317 datasheet

..1. Size:121K toshiba

2sc5317.pdf pdf_icon

2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF UHF Band Low Noise Amplifier Applications Unit mm (chip fT = 16 GHz series) Low noise figure NF = 1.3dB (f = 2 GHz) High gain Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emi... See More ⇒

0.1. Size:125K toshiba

2sc5317ft.pdf pdf_icon

2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF UHF Band Low Noise Amplifier Applications Unit mm (chip fT = 16 GHz series) Low noise figure NF = 1.3dB (f = 2 GHz) High gain S 2 = 9dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage V... See More ⇒

8.1. Size:126K toshiba

2sc5318.pdf pdf_icon