All Transistors. 2N6268 Datasheet

 

2N6268 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6268
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 6.25 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.35 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2300 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO128

 2N6268 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6268 Datasheet (PDF)

 9.1. Size:11K  semelab
2n6262.pdf

2N6268

2N6262Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 150V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.2. Size:11K  semelab
2n6263.pdf

2N6268

2N6263Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 120V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 9.3. Size:18K  semelab
2n6261.pdf

2N6268
2N6268

2N6261MECHANICAL DATAHOMETAXIAL-BASEDimensions in mm(inches)MEDIUM POWER SILICONNPN TRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.FEATURES fT = 800 kHz at 0.2A Maximum Safe-area of operation curvesfor dc and pulse operation. VCEV(sus) = 90V min Low Saturation Voltage:VCE(sat = 1.0V at IC = 0.5A)1.27 (0.050

 9.4. Size:11K  semelab
2n6260.pdf

2N6268

2N6260Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 40V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

 9.5. Size:11K  semelab
2n6264.pdf

2N6268

2N6264Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 150V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 9.6. Size:134K  jmnic
2n6261.pdf

2N6268
2N6268

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6261 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits Series and shunt-regulator driver and output stages High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.

 9.7. Size:147K  jmnic
2n6260.pdf

2N6268
2N6268

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6260 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits High-fidelity amplifers Solenoid drivers Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.

 9.8. Size:116K  inchange semiconductor
2n6262.pdf

2N6268
2N6268

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maxi

 9.9. Size:125K  inchange semiconductor
2n6261.pdf

2N6268
2N6268

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6261 DESCRIPTION With TO-66 package Low collector saturation voltage Wide safe operating area APPLICATIONS Power switching circuits Series and shunt-regulator driver and output stages High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter

 9.10. Size:128K  inchange semiconductor
2n6263 2n6264.pdf

2N6268
2N6268

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6263 2N6264 DESCRIPTION With TO-66 package High breakdown voltage Low collector saturation voltage APPLICATIONS A wide variety of medium-to-high power, high-voltage applications Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNI

 9.11. Size:125K  inchange semiconductor
2n6260.pdf

2N6268
2N6268

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6260 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits High-fidelity amplifers Solenoid drivers Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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