2SC5609 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5609
SMD Transistor Code: 3F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SSS
2SC5609 Transistor Equivalent Substitute - Cross-Reference Search
2SC5609 Datasheet (PDF)
2sc5609.pdf
Transistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SA20213 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2
2sc5607.pdf
Ordering number : ENN6403A2SC5607NPN Epitaxial Planar Silicon Transistor2SC5607DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2033AFeatures[2SC5607] Adoption of MBIT processes. 2.24.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
2sc5602.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5602NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm)ORDE
2sc5600.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5600NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5600 50 pcs (Non reel) 8 mm wide embossed taping2
2sc5603.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5603NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATION
2sc5606.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimoldORDERING INFORMATIONPart Number Quantity Supplying Form2SC5606 50 pcs (Non reel) 8 mm wide embossed taping2SC5606-T1 3
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
