2N6274A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6274A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
2N6274A Transistor Equivalent Substitute - Cross-Reference Search
2N6274A Datasheet (PDF)
2n6274-75 2n6277 2n6274 2n6275 2n6277.pdf
Order this documentMOTOROLAby 2N6274/DSEMICONDUCTOR TECHNICAL DATA2N6274High-Power NPN Silicon2N6275Transistors2N6277*. . . designed for use in industrialmilitary power amplifer and switching circuit*Motorola Preferred Deviceapplications. High Collector Emitter Sustaining 50 AMPEREVCEO(sus) = 100 Vdc (Min) 2N6274POWER TRANSISTORSVCEO(sus) = 120 Vdc
2n6274 2n6277.pdf
TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level JAN 2N6274 2N6277 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6274 2N6277 Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 120 180 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Base Current I 20 Adc B Collector Current 50 Adc IC 250 W T
2n6274.pdf
isc Silicon NPN Power Transistor 2N6274DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 10
Datasheet: 2N6268 , 2N6269 , 2N627 , 2N6270 , 2N6271 , 2N6272 , 2N6273 , 2N6274 , 8050 , 2N6275 , 2N6275A , 2N6276 , 2N6276A , 2N6277 , 2N6277A , 2N6278 , 2N6279 .
