2N6274A Specs and Replacement
Type Designator: 2N6274A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
2N6274A Substitution
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2N6274A datasheet
2n6274-75 2n6277 2n6274 2n6275 2n6277.pdf ![]()
Order this document MOTOROLA by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 High-Power NPN Silicon 2N6275 Transistors 2N6277 * . . . designed for use in industrial military power amplifer and switching circuit *Motorola Preferred Device applications. High Collector Emitter Sustaining 50 AMPERE VCEO(sus) = 100 Vdc (Min) 2N6274 POWER TRANSISTORS VCEO(sus) = 120 Vdc... See More ⇒
TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level JAN 2N6274 2N6277 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6274 2N6277 Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 120 180 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Base Current I 20 Adc B Collector Current 50 Adc IC 250 W T... See More ⇒
isc Silicon NPN Power Transistor 2N6274 DESCRIPTION Collector-Emitter Breakdown Voltage- V =100V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 10... See More ⇒
Detailed specifications: 2N6268, 2N6269, 2N627, 2N6270, 2N6271, 2N6272, 2N6273, 2N6274, A940, 2N6275, 2N6275A, 2N6276, 2N6276A, 2N6277, 2N6277A, 2N6278, 2N6279
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