2SC5772 Datasheet. Specs and Replacement

Type Designator: 2SC5772  📄📄 

SMD Transistor Code: FR-

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 9 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.075 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 6000 MHz

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: MPAK

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2SC5772 datasheet

 ..1. Size:90K  hitachi

2sc5772.pdf pdf_icon

2SC5772

2SC5772 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1390 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 9 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is FR- . This data sheet contains tentative sp... See More ⇒

 ..2. Size:1339K  kexin

2sc5772.pdf pdf_icon

2SC5772

SMD Type Transistors NPN Transistors 2SC5772 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=75mA 1 2 Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto... See More ⇒

 ..3. Size:170K  inchange semiconductor

2sc5772.pdf pdf_icon

2SC5772

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5772 DESCRIPTION High Gain Bandwidth Product f = 9 GHz TYP. T High power gain and low noise figure ; PG = 13 dB TYP., NF = 1.1 dB typ. @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF wide band amplifier. ... See More ⇒

 8.1. Size:30K  sanyo

2sc5778.pdf pdf_icon

2SC5772

Ordering number ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). Adoption of MBIT process. [2SC5778] On-chip damper diode. 5.6 ... See More ⇒

Detailed specifications: 2SC5725, 2SC5730, 2SC5739, 2SC5748, 2SC5757, 2SC5758, 2SC5759, 2SC5764, 2SD2499, 2SC5773, 2SC5776, 2SC5778, 2SC5779, 2SC5788, 2SC5791, 2SC5792, 2SC5801

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