2SC5788 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5788
SMD Transistor Code: C5788
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: MT-4-A1
2SC5788 Transistor Equivalent Substitute - Cross-Reference Search
2SC5788 Datasheet (PDF)
2sc5788.pdf
Power Transistors2SC5788Silicon NPN epitaxial planar typeUnit: mmPower supply for Audio & Visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features 1.20.1C 1.0 High-speed switching (tstg: storage time/tf: fall time is short)1.480.22.250.2 Low collector to emitter saturation voltage VCE(sat)
2sc5784.pdf
2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) fMaximum Ratings (Ta == 25C) ==
2sc5785.pdf
2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (T
2sc5787.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5787NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gainfT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHzNF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopte
2sc5786.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5786NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gainfT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHzNF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technolog
2sc5785.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC5785 TRANSISTORNPN SOT-89-3L 1 2 3 FEATURES 1. BASE High-Speed Switching Applications1 DC-DC Converter Applications2. COLLETOR 2 Strobe Applications3 3. EMITTER Marking: 3E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVC
2sc5785.pdf
SMD Type TransistorsNPN Transistors2SC57851.70 0.1 Features High DC current gain: hFE = 400 to 1000 Low collector-emitter saturation voltage High-speed switching0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitte
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
