2SC5875 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5875
SMD Transistor Code: C5875
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: ATV
2SC5875 Transistor Equivalent Substitute - Cross-Reference Search
2SC5875 Datasheet (PDF)
2sc5875.pdf
2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit : mm) Features 1) High speed switching. ATV2.56.8(Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max.3) Strong discharge power for inductive load and 0.5(1) (2) (3)capacitance load. 2.54 2.541.05 0.45(1) Emitter
2sc5876u3.pdf
2SC5876U3DatasheetMedium power transistor (60V, 0.5A)lOutlinel SOT-323 Parameter Value SC-70 VCEO60VIC500mAUMT3lFeatures lInner circuitl l1)High speed switching. (Tf:Typ.:80ns at IC=500mA)2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA)3)Strong discharge power for inductive load and ca
2sc5876.pdf
2SC5876DatasheetMedium power transistor (60V, 0.5A)lOutlinelParameter Value UMT3VCEO60VIC500mASOT-323SC-70 lFeaturesl1)High speed switching.lInner circuitl (Tf:Typ.:80ns at IC=500mA)2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA)3)Strong discharge power for
2sc5877s.pdf
2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0SPT(Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically : 0.45(Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitter4) Complements t
2sc5874s.pdf
2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0SPT(Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically : 0.45(Typ. 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitter4) Complem
2sc5876fra.pdf
AEC-Q101 QualifiedMedium power transistor (60V, 0.5A) 2SC5876FRAFeatures Dimensions (Unit : mm)1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) UMT32) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 1.253) Strong discharge power for inductive load and 2.1capacitance load. 2SA2088FRA4) Complements the 2SA2088 0.1Min.Each lea
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
