2N6277A Specs and Replacement
Type Designator: 2N6277A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
2N6277A Substitution
2N6277A datasheet
2n6274-75 2n6277 2n6274 2n6275 2n6277.pdf
Order this document MOTOROLA by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 High-Power NPN Silicon 2N6275 Transistors 2N6277 * . . . designed for use in industrial military power amplifer and switching circuit *Motorola Preferred Device applications. High Collector Emitter Sustaining 50 AMPERE VCEO(sus) = 100 Vdc (Min) 2N6274 POWER TRANSISTORS VCEO(sus) = 120 Vdc... See More ⇒
2n6274 2n6277.pdf
TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level JAN 2N6274 2N6277 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6274 2N6277 Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 120 180 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Base Current I 20 Adc B Collector Current 50 Adc IC 250 W T... See More ⇒
2n6277.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6277 DESCRIPTION High Switching Speed High DC Current Gain- hFE= 30-120@ IC= 20A Low Collector Saturation Voltage- VCE(sat)=1.0V(Min.)@ IC= 20A Complement to Type 2N6379 APPLICATIONS Designed for use in industrial-military power amplifier and switching circuit applications. ... See More ⇒
Detailed specifications: 2N6273 , 2N6274 , 2N6274A , 2N6275 , 2N6275A , 2N6276 , 2N6276A , 2N6277 , 8050 , 2N6278 , 2N6279 , 2N628 , 2N6280 , 2N6281 , 2N6282 , 2N6283 , 2N6284 .
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