2N6278 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6278
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO61
2N6278 Transistor Equivalent Substitute - Cross-Reference Search
2N6278 Datasheet (PDF)
2n6278.pdf
isc Silicon NPN Power Transistor 2N6278DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 10
2n6274-75 2n6277 2n6274 2n6275 2n6277.pdf
Order this documentMOTOROLAby 2N6274/DSEMICONDUCTOR TECHNICAL DATA2N6274High-Power NPN Silicon2N6275Transistors2N6277*. . . designed for use in industrialmilitary power amplifer and switching circuit*Motorola Preferred Deviceapplications. High Collector Emitter Sustaining 50 AMPEREVCEO(sus) = 100 Vdc (Min) 2N6274POWER TRANSISTORSVCEO(sus) = 120 Vdc
2n6270.pdf
2N6270Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n6271.pdf
2N6271Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6274 2n6277.pdf
TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level JAN 2N6274 2N6277 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6274 2N6277 Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 120 180 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Base Current I 20 Adc B Collector Current 50 Adc IC 250 W T
2n6276.pdf
isc Silicon NPN Power Transistor 2N6276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =140V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 14
2n6274.pdf
isc Silicon NPN Power Transistor 2N6274DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 10
2n6277.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6277 DESCRIPTION High Switching Speed High DC Current Gain- : hFE= 30-120@ IC= 20A Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A Complement to Type 2N6379 APPLICATIONSDesigned for use in industrial-military power amplifier and switching circuit applications.
2n6275.pdf
isc Silicon NPN Power Transistor 2N6275DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =120V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 140 VCBOV Collector-Emitter Voltage 12
2n6270 2n6271.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6270 2N6271 DESCRIPTION With TO-3 package High current capability Wide safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum rat
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
