2SA0879 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA0879
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SC-51 TO-92L-A1
2SA0879 Transistor Equivalent Substitute - Cross-Reference Search
2SA0879 Datasheet (PDF)
2sa0879.pdf
Transistors2SA0879 (2SA879)Silicon PNP epitaxial planar typeFor general amplificationUnit: mm5.90.2 4.90.2Complementary to 2SC1573 Features High collector-emitter voltage (Base open) VCEO0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO -250 VCollector-emitter voltage (Base open) VCEO -200 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .