2N628 Datasheet and Replacement

   Type Designator: 2N628
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

2N628 Substitution

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2N628 Datasheet (PDF)

0.1. Size:214K motorola
2n6282 2n6283 2n6284 2n6285 2n6286 2n6287.pdf pdf_icon

Order this documentMOTOROLAby 2N6282/DSEMICONDUCTOR TECHNICAL DATANPN2N6282Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and lowfrequency switching applica-2N6284*tions.PNP High DC Current Gain @ IC = 10 Adc 2N6285hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287

0.2. Size:149K motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf pdf_icon

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

0.3. Size:49K st
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2N62842N6287COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The 2N6284 is a silicon epitaxial-base NPNTO-3power transistor in monolithic Darlingtonconfiguration moun

0.4. Size:70K central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.5. Size:135K onsemi
2n6284g 2n6284g 2n6287g.pdf pdf_icon

2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1

0.6. Size:241K onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf pdf_icon

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

0.7. Size:241K onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf pdf_icon

0.8. Size:593K onsemi
2n6288g.pdf pdf_icon

PNP - 2N6107, 2N6109,2N6111; NPN - 2N6288,2N6292Complementary SiliconPlastic Power Transistorshttp://onsemi.comThese devices are designed for use in general-purpose amplifier andswitching applications.7 AMPEREFeaturesPOWER TRANSISTORS DC Current Gain Specified to 7.0 AmpereshFE = 30-150 @ ICCOMPLEMENTARY SILICON= 3.0 Adc - 2N6111, 2N628830 - 50 - 70 VOLTS, 40 WA

0.9. Size:135K onsemi
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0.10. Size:135K onsemi
2n6286g.pdf pdf_icon

0.11. Size:211K mospec
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0.12. Size:101K bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf pdf_icon

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

0.13. Size:181K cdil
2n6288.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N62882N6288 NPN PLASTIC POWER TRANSISTORComplementary 2N6111General Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.1

0.14. Size:174K aeroflex
2n6286 2n6287.pdf pdf_icon

PNP Darlington Power Silicon Transistor2N6286 & 2N6287Features Available in JANTX, and JANTXV per MIL-PRF-19500/505 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6286 2N6287 UnitsCollector - Emitter Voltage VCEO -80 -100 VdcCollector - Base Voltage VCBO -80 -100 VdcEmitter - Base Voltage VEBO -7.0 VdcBase Current IB -0.5 AdcCollector Current IC -20 Adc(1

0.15. Size:195K inchange semiconductor
2n6287.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6287DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -10 AdcFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6284Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntende

0.16. Size:118K inchange semiconductor
2n6285 2n6286 2n6287.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 DESCRIPTION With TO-3 package Complement to type 2N6282/6283/6284 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and

0.17. Size:188K inchange semiconductor
2n6289.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6289DESCRIPTIONDC Current Gain-: h = 30-150@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

0.18. Size:122K inchange semiconductor
2n6288 2n6290 2n6292.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYM

0.19. Size:118K inchange semiconductor
2n6282 2n6283 2n6284.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6282 2N6283 2N6284 DESCRIPTION With TO-3 package Complement to type 2N6285/6286/6287 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and

0.20. Size:209K inchange semiconductor
2n6284.pdf pdf_icon

isc Silicon NPN Darlingtion Power Transistor 2N6284DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I =10 AdcFE CCollector-Emitter Sustaining Voltage-V =100V(Min)CEO(SUS)Complement to type 2N6287Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amplif

0.21. Size:227K inchange semiconductor
2n6280.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6280DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =140V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 14

0.22. Size:223K inchange semiconductor
2n6282.pdf pdf_icon

isc Silicon NPN Darlingtion Power Transistor 2N6282DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = 10 AdcFE CCollector-Emitter Sustaining Voltage-V = 60V(Min)CEO(SUS)Complement to type 2N6285APPLICATIONSIntended for general purpose amplifier and low frequencyswitching applications, such as linear and switching indu-str

0.23. Size:194K inchange semiconductor
2n6286.pdf pdf_icon

isc Silicon PNP Darlingtion Power Transistor 2N6286DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -10 AdcFE CCollector-Emitter Sustaining Voltage-V = -80V(Min)CEO(SUS)Complement to type 2N6283Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amp

0.24. Size:200K inchange semiconductor
2n6283.pdf pdf_icon

isc Silicon NPN Darlingtion Power Transistor 2N6283DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I =10 AdcFE CCollector-Emitter Sustaining Voltage-V =80V(Min)CEO(SUS)Complement to type 2N6286Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amplifi

0.25. Size:227K inchange semiconductor
2n6281.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6281DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =150V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 180 VCBOV Collector-Emitter Voltage 15

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .