All Transistors. 2N6283 Datasheet

 

2N6283 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N6283

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 160 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

2N6283 Transistor Equivalent Substitute - Cross-Reference Search

 

2N6283 Datasheet (PDF)

1.1. 2n6282 2n6283 2n6284 2n6285 2n6286 2n6287.pdf Size:214K _motorola

2N6283
2N6283

Order this document MOTOROLA by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6282 Darlington Complementary thru Silicon Power Transistors . . . designed for generalpurpose amplifier and lowfrequency switching applica- 2N6284* tions. PNP High DC Current Gain @ IC = 10 Adc 2N6285 hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287 CollectorEmi

1.2. 2n6282 2n6283 2n6284.pdf Size:118K _inchange_semiconductor

2N6283
2N6283

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6285/6286/6287 Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6282 2N6283 2N6284 Fig.1 simplified outline (TO-3) a

 5.1. 2n6284g.pdf Size:135K _upd

2N6283
2N6283

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http://onsemi.com Features 20 AMPERE • High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

5.2. 2n6287g.pdf Size:135K _upd

2N6283
2N6283

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http://onsemi.com Features 20 AMPERE • High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

 5.3. 2n6288g.pdf Size:593K _upd

2N6283
2N6283

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. 7 AMPERE Features POWER TRANSISTORS • DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC COMPLEMENTARY SILICON = 3.0 Adc - 2N6111, 2N6288 30 - 50 - 70 VOLTS, 40 WA

5.4. 2n6286g.pdf Size:135K _upd

2N6283
2N6283

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http://onsemi.com Features 20 AMPERE • High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

 5.5. 2n6284g 2n6287g.pdf Size:135K _upd

2N6283
2N6283

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. http://onsemi.com Features 20 AMPERE • High DC Current Gain @ IC = 10 Adc - COMPLEMENTARY SILICON hFE = 2400 (Typ) - 2N6284 POWER TRANSISTORS = 4000 (Typ) - 2N6287 100 VOLTS, 1

5.6. 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Size:149K _motorola

2N6283
2N6283

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in generalpurpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All Devices 2N61

5.7. 2n6284 2n6287.pdf Size:49K _st

2N6283
2N6283

2N6284 2N6287 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N6284 is a silicon epitaxial-base NPN TO-3 power transistor in monolithic Darlington configuration mounted

5.8. 2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf Size:70K _central

2N6283

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.9. 2n6107 2n6109 2n6111 2n6288 2n6292.pdf Size:90K _onsemi

2N6283
2N6283

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. 7 AMPERE Features POWER TRANSISTORS DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC COMPLEMENTARY SILICON = 3.0 Adc - 2N611

5.10. 2n6282-87.pdf Size:211K _mospec

2N6283
2N6283

A A A A

5.11. 2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf Size:101K _bocasemi

2N6283
2N6283

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com

5.12. 2n6288.pdf Size:181K _cdil

2N6283
2N6283

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6288 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1

5.13. 2n6285 2n6286 2n6287.pdf Size:118K _inchange_semiconductor

2N6283
2N6283

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6282/6283/6284 Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6285 2N6286 2N6287 Fig.1 simplified outline (TO-3) a

5.14. 2n6288 2n6290 2n6292.pdf Size:122K _inchange_semiconductor

2N6283
2N6283

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL V

5.15. 2n6286 2n6287.pdf Size:174K _aeroflex

2N6283
2N6283

PNP Darlington Power Silicon Transistor 2N6286 & 2N6287 Features • Available in JANTX, and JANTXV per MIL-PRF-19500/505 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6286 2N6287 Units Collector - Emitter Voltage VCEO -80 -100 Vdc Collector - Base Voltage VCBO -80 -100 Vdc Emitter - Base Voltage VEBO -7.0 Vdc Base Current IB -0.5 Adc Collector Current IC -20 Adc (1

Datasheet: 2N6277 , 2N6277A , 2N6278 , 2N6279 , 2N628 , 2N6280 , 2N6281 , 2N6282 , BC639 , 2N6284 , 2N6285 , 2N6286 , 2N6287 , 2N6288 , 2N6289 , 2N629 , 2N6290 .

 
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