2N6283 Datasheet and Replacement

Order this documentMOTOROLAby 2N6282/DSEMICONDUCTOR TECHNICAL DATANPN2N6282Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and lowfrequency switching applica-2N6284*tions.PNP High DC Current Gain @ IC = 10 Adc 2N6285hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6282 2N6283 2N6284 DESCRIPTION With TO-3 package Complement to type 2N6285/6286/6287 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and

isc Silicon NPN Darlingtion Power Transistor 2N6283DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I =10 AdcFE CCollector-Emitter Sustaining Voltage-V =80V(Min)CEO(SUS)Complement to type 2N6286Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amplifi

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

2N62842N6287COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The 2N6284 is a silicon epitaxial-base NPNTO-3power transistor in monolithic Darlingtonconfiguration moun

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

PNP - 2N6107, 2N6109,2N6111; NPN - 2N6288,2N6292Complementary SiliconPlastic Power Transistorshttp://onsemi.comThese devices are designed for use in general-purpose amplifier andswitching applications.7 AMPEREFeaturesPOWER TRANSISTORS DC Current Gain Specified to 7.0 AmpereshFE = 30-150 @ ICCOMPLEMENTARY SILICON= 3.0 Adc - 2N6111, 2N628830 - 50 - 70 VOLTS, 40 WA

2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1

2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1

AAAA

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N62882N6288 NPN PLASTIC POWER TRANSISTORComplementary 2N6111General Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.1

PNP Darlington Power Silicon Transistor2N6286 & 2N6287Features Available in JANTX, and JANTXV per MIL-PRF-19500/505 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6286 2N6287 UnitsCollector - Emitter Voltage VCEO -80 -100 VdcCollector - Base Voltage VCBO -80 -100 VdcEmitter - Base Voltage VEBO -7.0 VdcBase Current IB -0.5 AdcCollector Current IC -20 Adc(1

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6287DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -10 AdcFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6284Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntende

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 DESCRIPTION With TO-3 package Complement to type 2N6282/6283/6284 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and

isc Silicon NPN Power Transistor 2N6289DESCRIPTIONDC Current Gain-: h = 30-150@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYM

isc Silicon NPN Darlingtion Power Transistor 2N6284DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I =10 AdcFE CCollector-Emitter Sustaining Voltage-V =100V(Min)CEO(SUS)Complement to type 2N6287Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amplif

isc Silicon NPN Power Transistor 2N6280DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =140V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 14

isc Silicon NPN Darlingtion Power Transistor 2N6282DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = 10 AdcFE CCollector-Emitter Sustaining Voltage-V = 60V(Min)CEO(SUS)Complement to type 2N6285APPLICATIONSIntended for general purpose amplifier and low frequencyswitching applications, such as linear and switching indu-str

isc Silicon PNP Darlingtion Power Transistor 2N6286DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -10 AdcFE CCollector-Emitter Sustaining Voltage-V = -80V(Min)CEO(SUS)Complement to type 2N6283Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amp

isc Silicon NPN Power Transistor 2N6281DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =150V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 180 VCBOV Collector-Emitter Voltage 15