2SA2007 Datasheet and Replacement

2SA2007TransistorsHigh-speed Switching Transistor (-60V,-12A)2SA2007 External dimensions (Units : mm) Features1) High switching speed.10.0 4.5(Typ. tf = 0.15s at Ic = -6A)3.2 2.8 2) Low saturation voltage.(Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A)3) Wide SOA. (safe operating area)1.21.34) Complements the 2SC5526.0.8( )(1) Base Gate0.752.54 2.5

2SA2005TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(-160V, -1.5A)2SA2005 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = -160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SC5511.1.21.

Power Transistors2SA2004Silicon PNP epitaxial planar typeUnit: mm4.60.2For power amplification 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV High-speed switching1.40.22.60.11.60.20.80.1 0.550.15

Transistors2SA2009Silicon PNP epitaxial planar typeFor low-frequency high breakdown voltage amplificationUnit: mm0.15+0.100.3+0.10.050.0 Features3 High collector-emitter voltage (Base open) VCEO Low noise voltage NV S-Mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing. 1 2(0.65) (0.

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ST 2SA200 PNP Silicon Epitaxial Planar Transistor for general purpose and switching amplifier The transistor is subdivided into two group, O and Y according to its DC current gain. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit60 VCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2004DESCRIPTIONSilicon PNP epitaxial planner type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas