2SA2067 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA2067
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: MT-4-A1
2SA2067 Transistor Equivalent Substitute - Cross-Reference Search
2SA2067 Datasheet (PDF)
2sa2067.pdf
Power Transistors2SA2067Silicon PNP epitaxial planar typeUnit: mmPower supply for audio & visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1 High speed switching (tstg: storage time/tf: fall time is short)C 1.01.480.2 Low collector-emitter saturation voltage VCE(sat)2.250.2
2sa2061.pdf
2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = 0.5 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristi
2sa2066.pdf
2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.2 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit
2sa2069.pdf
2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni
2sa2060.pdf
2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris
2sa2065.pdf
2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) fMaximum Ratings (Ta = 25C) Characteris
2sa2063 2sc5775.pdf
Ordering number : ENN69882SA2063 / 2SC5775PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2063 / 2SC5775160V / 12A, AF90W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2063 / 2SC5775]15.63.24.814.02
2sa2062 2sc5774.pdf
Ordering number : ENN69872SA2062 / 2SC5774PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2062 / 2SC5774140V / 10A, AF 70W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2062 / 2SC5774]15.63.24.814.0
2sa2064.pdf
Power Transistors2SA2064Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for audio & visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.40.22.60.11.60.2
st2sa2060u.pdf
ST 2SA2060U PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 2 ACollector Current (Pulse) -ICP 3.5 ABase Current -IB 200 mA0.
2sa2061.pdf
SMD Type TransistorsPNP Transistors2SA2061SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-2.5A1 2 Collector Emitter Voltage VCEO=-20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Co
2sa2060.pdf
SMD Type TransistorsPNP Transistors2SA2060SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V High-Speed Switching Applications0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Volt
2sa2062.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2062DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS140V/10V,AF 70W output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sa2063.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2063DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS160V/12V,AF 90W output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
