2SA2081 Datasheet, Equivalent, Cross Reference Search

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SA2089S Transistors Medium power transistor (-60V, -0.5A) 2SA2089S External dimensions (Unit : mm) Features 1) High speed switching. SPT 4.0 2.0(Tf : Typ. : 60ns at IC = -500mA) (SC-72)2) Low saturation voltage, typically :(Typ. -150mV at IC = -100mA, IB = -10mA) 0.453) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitt

2SA2086S Transistors Medium power transistor (-30V, -1A) 2SA2086S External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1A) 4.0 2.0SPT2) Low saturation voltage, typically :(Typ. -150mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.45capacitance load. 2.50.5 0.454) Complements the 2SC5874S 5

AEC-Q101 QualifiedMedium power transistor (60V, 0.5A)2SA2088FRAFeatures Dimensions (Unit : mm)1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA)UMT32) Low saturation voltage, typically 150mV at IC = 100mA, IB = 10mA): (Typ. 2.0 0.93) Strong discharge power for inductive load and capacitance load. 0.3 0.2 0.74) Complements the 2SC5876 2S

2SA2088DatasheetMedium power transistor (-60V, -0.5A)lOutlinelParameter Value UMT3VCEO-60VIC-0.5ASOT-323SC-70 lFeaturesl1)High speed switching.lInner circuitl (Tf:Typ.:60ns at IC=-500mA)2)Low saturation voltage, typically (Typ.:-150mV at IC=-100mA, IB=-10mA)3)Strong discharge pow

2SA2087 Transistors Power transistor (-30V, -2A) 2SA2087 External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) ATV2.56.82) Low saturation voltage, typically :(Typ. -200mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.65Max.capacitance load. 0.5(1) (2) (3)4) Complements the 2SC5875 2

Transistors2SA2084Silicon PNP epitaxial planar typeUnit: mmFor general amplification0.40+0.100.050.16+0.100.063 Features High collector-emitter voltage (Base open) VCEO Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.95) (0.95) Absolute Maximum Ratings Ta = 25C1.90.12.90+0.20