2SB1130AM Datasheet. Specs and Replacement
Type Designator: 2SB1130AM 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: ATR
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2SB1130AM datasheet
8.2. Size:90K sanyo
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2SB1132 2SB1132 TRANSISTOR (PNP) Features Compliments 2SD1664 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbl Parameter Value Unit V VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 1. BASE A IC Collector Current-Continuous -1 A I Collector Current -Pulsed CP -2 2. COLLECTOR mW PC Collec... See More ⇒
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8.30. Size:199K inchange semiconductor
2sb1136.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -6A CE(sat) C Complement to Type 2SD1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inver... See More ⇒
8.31. Size:213K inchange semiconductor
2sb1135.pdf
isc Silicon PNP Power Transistor 2SB1135 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -4A CE(sat) C Complement to Type 2SD1668 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, and other genera... See More ⇒
8.32. Size:213K inchange semiconductor
2sb1133.pdf
isc Silicon PNP Power Transistor 2SB1133 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1666 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX... See More ⇒
8.33. Size:214K inchange semiconductor
2sb1134.pdf
isc Silicon PNP Power Transistor 2SB1134 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -3A CE(sat) C Complement to Type 2SD1667 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, and other genera... See More ⇒
Detailed specifications: 2SA2199, 2SA3886A, 2SA821S, 2SA9012, 2SA9015, 2SA986A, 2SB1066M, 2SB1076M, 2SC2655, 2SB1261-Z, 2SB1321A, 2SB1414, 2SB1446, 2SB1448, 2SB1453, 2SB1470, 2SB1475
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