2SB1446 Datasheet. Specs and Replacement
Type Designator: 2SB1446 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: MT2
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2SB1446 datasheet
..1. Size:44K panasonic
2sb1446 e.pdf 
Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo... See More ⇒
..2. Size:39K panasonic
2sb1446.pdf
Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo... See More ⇒
8.1. Size:57K rohm
2sa1797 2sb1443.pdf
2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage... See More ⇒
8.2. Size:165K rohm
2sb1443.pdf
Power Transistor (-50V, -2A) 2SB1443 Features Dimensions (Unit mm) 1) Low saturation voltage. ATV VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit (1) (2) (3) (1) (2) (3) (1) Emitter Collector-base voltage VCBO -50 V (2) Collector Collector-emitter ... See More ⇒
8.4. Size:41K panasonic
2sb1440 e.pdf
Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2185 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0... See More ⇒
8.5. Size:79K panasonic
2sb1440.pdf
Transistors 2SB1440 Silicon PNP epitaxial planar type Unit mm For low-frequency output amplification 4.5 0.1 1.6 0.2 1.5 0.1 Complementary to 2SD2185 Features Low collector-emitter saturation voltage VCE(sat) 1 23 0.4 0.08 0.5 0.08 0.4 0.04 Mini Power type package, allowing downsizing of the equipment 1.5 0.1 and automatic insertion through the tape packing and... See More ⇒
8.6. Size:99K secos
2sb1440.pdf
2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification B 1 C 2 Complements to 2SD2185 E 3 A E C PACKAGE INFORMATION Package MPQ LeaderSize B D ... See More ⇒
8.7. Size:437K jiangsu
2sb1440.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1440 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter V... See More ⇒
8.8. Size:321K shindengen
2sb1448.pdf
SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case ITO-3P (TP15J10) -15A PNP RATINGS Unit mm ... See More ⇒
8.9. Size:219K htsemi
2sb1440.pdf
2SB1 440 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Bas... See More ⇒
8.10. Size:197K lge
2sb1440 sot-89.pdf
2SB1440 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 0.40 For low-frequency output amplification 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SD2185 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted)... See More ⇒
8.11. Size:498K willas
2sb1440.pdf
FM120-M WILLAS 2SB1440THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) SOD-123H Low profile surface mounted application... See More ⇒
8.12. Size:871K kexin
2sb1440.pdf
SMD Type Transistors PNP Transistors 2SB1440 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SD2185 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO ... See More ⇒
Detailed specifications: 2SA9015, 2SA986A, 2SB1066M, 2SB1076M, 2SB1130AM, 2SB1261-Z, 2SB1321A, 2SB1414, 2N4401, 2SB1448, 2SB1453, 2SB1470, 2SB1475, 2SB1492, 2SB1493, 2SB1502, 2SB1503
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