All Transistors. 2SB1623 Equivalents Search

 

2SB1623 Specs and Replacement


   Type Designator: 2SB1623
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-220D-A1

 2SB1623 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1623 detailed specifications

 ..1. Size:76K  panasonic
2sb1623.pdf pdf_icon

2SB1623

Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings Ta = 25 C 0.8... See More ⇒

 0.1. Size:76K  panasonic
2sb1623a.pdf pdf_icon

2SB1623

Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV Absolute Maximum Ratings Ta = 25 C 1.4 0.2 2.6 0.1 1.6 0.2 Pa... See More ⇒

 8.1. Size:125K  nec
2sb1628.pdf pdf_icon

2SB1623

DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension PACKAGE DRAWING (UNIT mm) and is ideal for DC/DC converters and mortor drivers. FEATURES High current capacitance Low collector saturation voltage QUALITY GRADES Standard Please re... See More ⇒

 8.2. Size:53K  panasonic
2sb1629.pdf pdf_icon

2SB1623

Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 ... See More ⇒

Detailed specifications: 2SB1574 , 2SB1589 , 2SB1592 , 2SC5617 , 2SB1593 , 2SB1599 , 2SB1602 , 2SB1612 , BD136 , 2SB1623A , 2SB1629 , 2SB1631 , 2SB1638 , 2SB1638A , 2SB1643 , 2SB1645 , 2SB1653 .

History: MUN5112DW1 | MUN5111DW1T1G

Keywords - 2SB1623 transistor specs

 2SB1623 cross reference
 2SB1623 equivalent finder
 2SB1623 lookup
 2SB1623 substitution
 2SB1623 replacement

 

 
Back to Top

 


 
.