2SC6093LS Datasheet. Specs and Replacement
Type Designator: 2SC6093LS 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5.3
Noise Figure, dB: -
Package: TO-220FI
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2SC6093LS datasheet
7.1. Size:48K sanyo
2sc6093.pdf 
Ordering number ENA0274 2SC6093LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6093LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Rating... See More ⇒
7.2. Size:181K inchange semiconductor
2sc6093.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6093 DESCRIPTION Low saturation voltage Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
8.1. Size:50K sanyo
2sc6092ls.pdf
Ordering number ENA0834 2SC6092LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6092LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb... See More ⇒
8.2. Size:40K sanyo
2sc6099.pdf
Ordering number ENA0435 2SC6099 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6099 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch... See More ⇒
8.3. Size:51K sanyo
2sc6090ls.pdf
Ordering number ENA0996 2SC6090LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6090LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb... See More ⇒
8.4. Size:50K sanyo
2sc6097.pdf
Ordering number ENA0412 2SC6097 NPN Epitaxial Planar Silicon Transistor 2SC6097 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis... See More ⇒
8.5. Size:40K sanyo
2sc6098.pdf
Ordering number ENA0413 2SC6098 NPN Epitaxial Planar Silicon Transistor 2SC6098 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis... See More ⇒
8.6. Size:47K sanyo
2sc6096.pdf
Ordering number ENA0434 2SC6096 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6096 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch... See More ⇒
8.8. Size:425K sanyo
2sc6095.pdf
2SC6095 Ordering number ENA0411A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6095 High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin... See More ⇒
8.9. Size:295K onsemi
2sc6099-e 2sc6099.pdf
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss... See More ⇒
8.10. Size:401K onsemi
2sc6099.pdf
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss... See More ⇒
8.11. Size:410K onsemi
2sc6097.pdf
Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi... See More ⇒
8.12. Size:408K onsemi
2sc6098.pdf
Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis... See More ⇒
8.13. Size:198K onsemi
2sc6096 2sc6096-td-h.pdf
Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati... See More ⇒
8.14. Size:307K onsemi
2sc6097-e 2sc6097.pdf
Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi... See More ⇒
8.15. Size:315K onsemi
2sc6096.pdf
Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati... See More ⇒
8.16. Size:330K onsemi
2sc6094.pdf
Ordering number ENA0410A 2SC6094 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio... See More ⇒
8.17. Size:322K onsemi
2sc6095.pdf
Ordering number ENA0411A 2SC6095 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat... See More ⇒
8.18. Size:300K onsemi
2sc6098-e 2sc6098.pdf
Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis... See More ⇒
8.19. Size:170K inchange semiconductor
2sc6090.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6090 DESCRIPTION Collector-Base Breakdown Voltage- V = 1500V (Min) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) ... See More ⇒
8.22. Size:250K inchange semiconductor
2sc6098.pdf
isc Silicon NPN Power Transistor 2SC6098 DESCRIPTION Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
Detailed specifications: 2SB1693, 2SB1699, 2SB1713, FJAF6810A_J6810A, 2SC5936, 2SC5248, 2SC5615, 2SC5694, C5198, 2SB1714, 2SB1722J, 2SB1734, 2SB792A, 2SB910M, 2SD1341P, 2SD1381F, 2SD1536M
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