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2SD2213 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD2213

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO-92MOD

2SD2213 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2213 Datasheet (PDF)

1.1. 2sd2213.pdf Size:32K _hitachi

2SD2213
2SD2213

2SD2213 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 15 k? 0.5 ? 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2213 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8V Collector current IC 1.5 A

4.1. 2sd2218.pdf Size:121K _sanyo

2SD2213
2SD2213

Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Lar

4.2. 2sd2219.pdf Size:126K _sanyo

2SD2213
2SD2213

Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. L

 4.3. 2sd2217.pdf Size:100K _nec

2SD2213
2SD2213

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm) frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse motor d

4.4. 2sd2211 2sd1918 2sd1857a.pdf Size:68K _rohm

2SD2213
2SD2213

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate) (2)

 4.5. 2sd2211.pdf Size:63K _rohm

2SD2213
2SD2213

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate) (2)

4.6. 2sd2212.pdf Size:71K _rohm

2SD2213
2SD2213

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2) 4)

4.7. 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf Size:48K _rohm

2SD2213

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

4.8. 2sd2210.pdf Size:42K _panasonic

2SD2213
2SD2213

Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0 0.15 Paramete

4.9. 2sd2216.pdf Size:36K _panasonic

2SD2213
2SD2213

Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (

4.10. 2sd2216 e.pdf Size:40K _panasonic

2SD2213
2SD2213

Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (

4.11. 2sd2216j e.pdf Size:40K _panasonic

2SD2213
2SD2213

Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB1462J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. +0.05 0.850.03 Ab

4.12. 2sd2215.pdf Size:49K _panasonic

2SD2213
2SD2213

Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type Unit: mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Features High collector to base voltage VCBO 1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to 0.75 0.1 0.4 0.1 the printed circuit board, etc. of small electronic equipment. 2.3 0.2 Absolute Maximum Ratings (T

4.13. 2sd2210 e.pdf Size:46K _panasonic

2SD2213
2SD2213

Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0 0.15 Paramete

4.14. 2sd2210.pdf Size:905K _kexin

2SD2213
2SD2213

SMD Type Transistors NPN Transistors 2SD2210 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.5A ● Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE

4.15. 2sd2211.pdf Size:984K _kexin

2SD2213
2SD2213

SMD Type Transistors NPN Transistors 2SD2211 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=160V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage

4.16. 2sd2212.pdf Size:907K _kexin

2SD2213
2SD2213

SMD Type Transistors NPN Transistors 2SD2212 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=50V C 0.42 0.1 0.46 0.1 B R1 R2 1.Base E 2.Collector R1 3.5kΩ R2 300Ω 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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