All Transistors. 2SD2213 Datasheet

 

2SD2213 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD2213

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO-92MOD

2SD2213 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2213 Datasheet (PDF)

0.1. 2sd2213.pdf Size:32K _hitachi

2SD2213
2SD2213

2SD2213Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter15 k 0.5 2. Collector (Typ) (Typ)13. Base3212SD2213Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 8VCollector current

8.1. 2sd2218.pdf Size:121K _sanyo

2SD2213
2SD2213

Ordering number:EN3363PNP/NPN Epitaxial Planar Silicon Transistors2SB1467/2SD2218General High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2041AFeatures [2SB1467/2SD2218] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.

8.2. 2sd2219.pdf Size:126K _sanyo

2SD2213
2SD2213

Ordering number:EN3364PNP/NPN Epitaxial Planar Silicon Transistors2SB1468/2SD221930V/8A High-Speed Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, etc. unit:mm2041AFeatures [2SB1468/2SD2219] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) ma

 8.3. 2sd2217.pdf Size:100K _nec

2SD2213
2SD2213

DATA SHEETDARLINGTON POWER TRANSISTOR2SD2217NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2217 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)frequency power amplifiers and low-speed switching. Thistransistor is ideal for direct driving from the IC out to drivers such aspulse moto

8.4. 2sd2211 2sd1918 2sd1857a.pdf Size:68K _rohm

2SD2213
2SD2213

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

 8.5. 2sd2211.pdf Size:63K _rohm

2SD2213

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

8.6. 2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf Size:71K _rohm

2SD2213
2SD2213

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

8.7. 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf Size:48K _rohm

2SD2213

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

8.8. 2sd2210.pdf Size:42K _panasonic

2SD2213
2SD2213

Transistor2SD2210Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).45Low ON resistance Ron.High foward current transfer ratio hFE.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0

8.9. 2sd2216.pdf Size:36K _panasonic

2SD2213
2SD2213

Transistor2SD2216Silicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB14621.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Rati

8.10. 2sd2216 e.pdf Size:40K _panasonic

2SD2213
2SD2213

Transistor2SD2216Silicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB14621.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Rati

8.11. 2sd2216j e.pdf Size:40K _panasonic

2SD2213
2SD2213

Transistor2SD2216JSilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1462J1.60 0.050.80 0.80 0.050.425 0.425FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.+0.050.850

8.12. 2sd2215.pdf Size:49K _panasonic

2SD2213
2SD2213

Power Transistors2SD2215, 2SD2215ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Features High collector to base voltage VCBO1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to0.75 0.1 0.4 0.1the printed circuit board, etc. of small electronic equipment.2.3 0.2Absolute Maximum

8.13. 2sd2210 e.pdf Size:46K _panasonic

2SD2213
2SD2213

Transistor2SD2210Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).45Low ON resistance Ron.High foward current transfer ratio hFE.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0

8.14. 2sd2210.pdf Size:905K _kexin

2SD2213
2SD2213

SMD Type TransistorsNPN Transistors2SD2210SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE

8.15. 2sd2211.pdf Size:984K _kexin

2SD2213
2SD2213

SMD Type TransistorsNPN Transistors2SD2211SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage

8.16. 2sd2212.pdf Size:907K _kexin

2SD2213
2SD2213

SMD Type TransistorsNPN Transistors2SD2212SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50VC0.42 0.10.46 0.1BR1 R21.BaseE2.CollectorR1 3.5kR2 300 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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