2SD2459 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2459
SMD Transistor Code: 2E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SC-62
2SD2459 Transistor Equivalent Substitute - Cross-Reference Search
2SD2459 Datasheet (PDF)
2sd2459.pdf
Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4
2sd2459 e.pdf
Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4
2sd2459.pdf
SMD Type TransistorsNPN Transistors2SD2459SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=150V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage V
2sd2457.pdf
Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
2sd2457 e.pdf
Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
2sd2453.pdf
Power Transistors2SD2453Silicon NPN triple diffusion planar typeUnit: mm6.50.1For high current transfer ratio and power amplification2.30.15.30.14.350.10.50.1 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)1.00.10.10.050.50.10.750.1 Absolute Maximum Ratings Ta = 25C2.30.1(5
2sd2457.pdf
SMD Type TransistorsNPN Transistors2SD24571.70 0.1 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Complementary to 2SB15990.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 40 V Emitt
2sd2454.pdf
isc Silicon NPN Power Transistor 2SD2454DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
