2SD2486 Specs and Replacement
Type Designator: 2SD2486
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO-220
2SD2486 Substitution
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2SD2486 datasheet
Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High forward current transfer ratio hFE which has satisfactory linearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat si... See More ⇒
2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Characteristics ... See More ⇒
2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha... See More ⇒
100 Max 200 A) 100 Max 200 V 6500-20000 (P) (Y) . . . V V Max 120 TY P 10 0 ... See More ⇒
Detailed specifications: 2SD2466, 2SD2466A, 2SD2467, 2SD2468, 2SD2469, 2SD2469A, 2SD2478, 2SD2479, B647, 2SD2491, 2SD2492, 2SD2504, 2SD2527, 2SD2528, 2SD2530, 2SD2538, 2SD2544
Keywords - 2SD2486 pdf specs
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History: 2SD718O | 2SB772SQ-Q | 2SD882SQ-Q
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