All Transistors. 2SD2486 Datasheet

 

2SD2486 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD2486
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO-220

 2SD2486 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD2486 Datasheet (PDF)

 ..1. Size:70K  panasonic
2sd2486.pdf

2SD2486 2SD2486

Power Transistors2SD2486Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High forward current transfer ratio hFE which has satisfactorylinearity 3.1 0.1Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat si

 8.1. Size:167K  toshiba
2sd2481.pdf

2SD2486 2SD2486

2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Characteristics

 8.2. Size:179K  toshiba
2sd2480.pdf

2SD2486 2SD2486

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

 8.3. Size:355K  no
2sd2488.pdf

2SD2486 2SD2486

100 Max200 A)100 Max200 V 6500-20000 (P) (Y). . .V V Max120 TY P 10 0

 8.4. Size:219K  inchange semiconductor
2sd2488.pdf

2SD2486 2SD2486

Inchange Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2488DESCRIPTIONWith TO-3PN packageDARLINGTONHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio ,regulator and general purposeAbsolute maximum ratings(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBO

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: D42CU1 | DTC115TM3T5G | D42R1 | 2SD2276 | PNT523T503E0-2 | BF321C

 

 
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