2SD2527 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2527
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO-220D
2SD2527 Transistor Equivalent Substitute - Cross-Reference Search
2SD2527 Datasheet (PDF)
2sd2527.pdf
Power Transistors2SD2527Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6
2sd2526.pdf
2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) C Complementary to 2SB1641 Maximum Ratings (Ta = 25C)
2sd2525.pdf
2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm High DC current gain: 100 (min) Low saturation voltage: V = 0.4 V (typ.) (I = 2 A, I = 0.2 A) CE (sat) C B Complementary to 2SB1640 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-em
2sd2528.pdf
Power Transistors2SD2528Silicon NPN epitaxial planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6 0.1Ab
2sd2524.pdf
isc Silicon NPN Power Transistor 2SD2524DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
