All Transistors. FJA3835 Datasheet

 

FJA3835 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJA3835
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 210 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO-3P

 FJA3835 Transistor Equivalent Substitute - Cross-Reference Search

   

FJA3835 Datasheet (PDF)

 ..1. Size:62K  fairchild semi
 fja3835.pdf

FJA3835 FJA3835

FJA3835Power Amplifier High Current Capability : IC=8A High Power Dissipation Wide S.O.ATO-3P11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 8 VIC Collector Current (DC

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SB204

 

 
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