All Transistors. FJA3835 Datasheet

 

FJA3835 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJA3835
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 210 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO-3P

 FJA3835 Transistor Equivalent Substitute - Cross-Reference Search

   

FJA3835 Datasheet (PDF)

 ..1. Size:62K  fairchild semi
 fja3835.pdf

FJA3835 FJA3835

FJA3835Power Amplifier High Current Capability : IC=8A High Power Dissipation Wide S.O.ATO-3P11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 8 VIC Collector Current (DC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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