FJA3835 Specs and Replacement

Type Designator: FJA3835

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 210 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO-3P

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FJA3835 datasheet

 ..1. Size:62K  fairchild semi

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FJA3835

FJA3835 Power Amplifier High Current Capability IC=8A High Power Dissipation Wide S.O.A TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current (DC... See More ⇒

Detailed specifications: FMB2227A, FFB3904, FMB3904, FFB3906, FMB3906, FFB3946, FMB3946, FFB5551, 431, FJAF4210, FJAF4310, FJC1308, FJC1386, FJC1963, FJC2383, FJC690, FJC790

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