FJC1308 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJC1308
SMD Transistor Code: FBP_FBQ_FBR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-89
FJC1308 Transistor Equivalent Substitute - Cross-Reference Search
FJC1308 Datasheet (PDF)
fjc1308.pdf
July 2005FJC1308PNP Epitaxial Silicon TransistorAudio Power Amplifier Applications Complement to FJC1963 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 3 0 8P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll
fjc1386.pdf
July 2005FJC1386PNP Epitaxial Silicon TransistorLow Saturation Transistor Medium Power Amplifier Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 3 8 6P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value Uni
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
