2N631 Datasheet and Replacement
Type Designator: 2N631
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.17 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 95 °C
Transition Frequency (ft): 1.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO5
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2N631 Datasheet (PDF)
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf

ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n6312 2n6313 2n6314.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorA
2n6315 2n6316.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6317/6318 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 Collect
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: FMMT723 | 2N3322 | 2SC1543 | 2SC3356 | 2N1832 | DTL8753 | DTL3504
Keywords - 2N631 transistor datasheet
2N631 cross reference
2N631 equivalent finder
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History: FMMT723 | 2N3322 | 2SC1543 | 2SC3356 | 2N1832 | DTL8753 | DTL3504



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