2N631 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N631 Specs and Replacement

Type Designator: 2N631

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.17 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 95 °C

Electrical Characteristics

Transition Frequency (ft): 1.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO5

2N631 Substitution

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2N631 datasheet

0.1. Size:165K mospec

2n6315-18.pdf pdf_icon

A A A A ... See More ⇒

0.2. Size:196K bocasemi

2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf pdf_icon

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com ... See More ⇒

0.3. Size:131K inchange semiconductor

2n6312 2n6313 2n6314.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector A... See More ⇒

0.4. Size:131K inchange semiconductor

2n6315 2n6316.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6317/6318 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collect... See More ⇒