FJN3308R Specs and Replacement
Type Designator: FJN3308R
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.7 pF
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: TO-92
- BJT ⓘ Cross-Reference Search
FJN3308R datasheet
..1. Size:36K fairchild semi
fjn3308r.pdf 
FJN3308R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K , R2=22K ) Complement to FJN4308R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VC... See More ⇒
8.1. Size:37K fairchild semi
fjn3307r.pdf
FJN3307R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K , R2=47K ) Complement to FJN4307R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC... See More ⇒
8.2. Size:69K fairchild semi
fjn3305r.pdf
FJN3305R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=10K ) Complement to FJN4305R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC... See More ⇒
8.3. Size:69K fairchild semi
fjn3301r.pdf
FJN3301R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=4.7K ) Complement to FJN4301R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units ... See More ⇒
8.4. Size:65K fairchild semi
fjn3304r.pdf
FJN3304R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47K , R2=47K ) Complement to FJN4304R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCB... See More ⇒
8.5. Size:36K fairchild semi
fjn3303r.pdf
FJN3303R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K , R2=22K ) Complement to FJN4303R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO... See More ⇒
8.6. Size:186K fairchild semi
fjn3303f.pdf
December 2009 FJN3303F High Voltage Fast-Switching NPN Power Transistor Features High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Charger Green packaging TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emit... See More ⇒
8.7. Size:37K fairchild semi
fjn3302r.pdf
FJN3302R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K , R2=10K ) Complement to FJN4302R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCB... See More ⇒
8.8. Size:33K fairchild semi
fjn3309r.pdf
FJN3309R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K ) Complement to FJN4309R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector... See More ⇒
8.9. Size:70K fairchild semi
fjn3306r.pdf
FJN3306R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K , R2=47K ) Complement to FJN4306R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC... See More ⇒
8.10. Size:438K fairchild semi
fjn3303.pdf
May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Charger TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base ... See More ⇒
8.11. Size:232K onsemi
fjn3303f.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FJN3301R, FJN3302R, FJN3303, FJN3303R, FJN3304R, FJN3305R, FJN3306R, FJN3307R, 2N5551, FJN3309R, FJN3310R, FJN3311R, FJN3312R, FJN3313R, FJN3314R, FJN3315R, FJN4301R
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