All Transistors. FJNS3207R Datasheet

 

FJNS3207R Datasheet, Equivalent, Cross Reference Search

Type Designator: FJNS3207R

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: TO-92S

FJNS3207R Transistor Equivalent Substitute - Cross-Reference Search

 

FJNS3207R Datasheet (PDF)

1.1. fjns3207r.pdf Size:37K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3207R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K?, R2=47K?) Complement to FJNS4207R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector

3.1. fjns3206r.pdf Size:70K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3206R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K?, R2=47K?) Complement to FJNS4206R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector

3.2. fjns3208r.pdf Size:36K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3208R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K?, R2=22K?) Complement to FJNS4208R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector

 3.3. fjns3204r.pdf Size:65K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3204R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47K?, R2=47K?) Complement to FJNS4204R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-

3.4. fjns3201r.pdf Size:69K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3201R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K?, R2=4.7K?) Complement to FJNS4201R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collect

 3.5. fjns3203r.pdf Size:37K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3203R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K?, R2=22K?) Complement to FJNS4203R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

3.6. fjns3205r.pdf Size:69K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3205R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K?, R2=10K?) Complement to FJNS4205R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector

3.7. fjns3202r.pdf Size:37K _fairchild_semi

FJNS3207R
FJNS3207R

FJNS3202R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K?, R2=10K?) Complement to FJNS4202R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-

Datasheet: FJN5471 , FJN965 , FJNS3201R , FJNS3202R , FJNS3203R , FJNS3204R , FJNS3205R , FJNS3206R , 2N60C , FJNS3208R , FJNS3210R , FJNS3211R , FJNS3212R , FJNS3213R , FJNS3214R , FJNS3215R , FJNS4201R .

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