FJPF9020 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJPF9020
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 550 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO-220F
FJPF9020 Transistor Equivalent Substitute - Cross-Reference Search
FJPF9020 Datasheet (PDF)
..1. Size:63K fairchild semi
fjpf9020.pdf
fjpf9020.pdf
FJPF9020Monolithic Construction With Built In Base-Emitter Shunt Resistors High Collector-Base Breakdown Voltage : BVCBO = -550V High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) Industrial UseTO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Par
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
