FJT44 Specs and Replacement
Type Designator: FJT44
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT-223
FJT44 Substitution
- BJT ⓘ Cross-Reference Search
FJT44 datasheet
December 2009 FJT44 NPN Epitaxial Silicon Transistor Features High Voltage Transistor 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collector Dissipation (TA... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FJNS4212R, FJNS4213R, FJNS4214R, FJP5321, FJP5355, FJP9100, FJPF5321, FJPF9020, 2SB817, FJV1845, FJV3101R, FJV3102R, FJV3103R, FJV3104R, FJV3105R, FJV3106R, FJV3107R
Keywords - FJT44 pdf specs
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