FJT44 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJT44
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT-223
FJT44 Transistor Equivalent Substitute - Cross-Reference Search
FJT44 Datasheet (PDF)
fjt44.pdf
December 2009FJT44NPN Epitaxial Silicon TransistorFeatures High Voltage Transistor 321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 6 VIC Collector Current 300 mAPC Collector Dissipation (TA
fjt44tf fjt44ktf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
