All Transistors. FJV3108R Datasheet

 

FJV3108R Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJV3108R
   SMD Transistor Code: R28
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT-23

 FJV3108R Transistor Equivalent Substitute - Cross-Reference Search

   

FJV3108R Datasheet (PDF)

 ..1. Size:55K  fairchild semi
fjv3108r.pdf

FJV3108R
FJV3108R

FJV3108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV4108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R28BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.1. Size:84K  fairchild semi
fjv3104r.pdf

FJV3108R
FJV3108R

FJV3104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit,3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV4104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R24BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.2. Size:56K  fairchild semi
fjv3102r.pdf

FJV3108R
FJV3108R

FJV3102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV4102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R22BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.3. Size:88K  fairchild semi
fjv3105r.pdf

FJV3108R
FJV3108R

FJV3105RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV4105R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R25BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.4. Size:89K  fairchild semi
fjv3106r.pdf

FJV3108R
FJV3108R

FJV3106RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=47K) Complement to FJV4106R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R26BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.5. Size:56K  fairchild semi
fjv3107r.pdf

FJV3108R
FJV3108R

FJV3107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV4107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R27BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.6. Size:55K  fairchild semi
fjv3101r.pdf

FJV3108R
FJV3108R

FJV3101RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJV4101R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R21BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no

 8.7. Size:56K  fairchild semi
fjv3103r.pdf

FJV3108R
FJV3108R

FJV3103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV4103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R23BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.8. Size:52K  fairchild semi
fjv3109r.pdf

FJV3108R
FJV3108R

FJV3109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K) Complement to FJV4109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR29RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: CV7723L-O

 

 
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