All Transistors. FJV3108R Datasheet

 

FJV3108R Datasheet and Replacement


   Type Designator: FJV3108R
   SMD Transistor Code: R28
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT-23
 

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FJV3108R Datasheet (PDF)

 ..1. Size:55K  fairchild semi
 fjv3108r.pdf pdf_icon

FJV3108R

FJV3108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV4108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R28BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.1. Size:84K  fairchild semi
 fjv3104r.pdf pdf_icon

FJV3108R

FJV3104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit,3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV4104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R24BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.2. Size:56K  fairchild semi
 fjv3102r.pdf pdf_icon

FJV3108R

FJV3102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV4102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R22BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.3. Size:88K  fairchild semi
 fjv3105r.pdf pdf_icon

FJV3108R

FJV3105RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV4105R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R25BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

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Datasheet: FJV1845 , FJV3101R , FJV3102R , FJV3103R , FJV3104R , FJV3105R , FJV3106R , FJV3107R , D965 , FJV3109R , FJV3110R , FJV3111R , FJV3112R , FJV3113R , FJV3114R , FJV3115R , FJV4101R .

Keywords - FJV3108R transistor datasheet

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