FJV3114R Specs and Replacement
Type Designator: FJV3114R
SMD Transistor Code: R34
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.7 pF
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SOT-23
FJV3114R Substitution
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FJV3114R datasheet
November 2006 FJV3114R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=47K ) Complement to FJV4114R Eqivalent Circuit C 3 R34 2 B E SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units ... See More ⇒
FJV3111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to FJV4111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R31 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete... See More ⇒
FJV3115R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K , R2=10K ) 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R35 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value U... See More ⇒
FJV3110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K ) Complement to FJV4110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R30 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet... See More ⇒
Detailed specifications: FJV3106R, FJV3107R, FJV3108R, FJV3109R, FJV3110R, FJV3111R, FJV3112R, FJV3113R, 2SA1015, FJV3115R, FJV4101R, FJV4102R, FJV4103R, FJV4104R, FJV4105R, FJV4106R, FJV4107R
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History: 2SB342
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