All Transistors. FJV4106R Datasheet

 

FJV4106R Datasheet and Replacement


   Type Designator: FJV4106R
   SMD Transistor Code: R76
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SOT-23
 

 FJV4106R Substitution

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FJV4106R Datasheet (PDF)

 ..1. Size:89K  fairchild semi
 fjv4106r.pdf pdf_icon

FJV4106R

FJV4106RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=47K) Complement to FJV3106R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R76BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.1. Size:52K  fairchild semi
 fjv4109r.pdf pdf_icon

FJV4106R

FJV4109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to FJV3109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR79RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

 8.2. Size:56K  fairchild semi
 fjv4107r.pdf pdf_icon

FJV4106R

FJV4107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV3107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R77BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.3. Size:56K  fairchild semi
 fjv4103r.pdf pdf_icon

FJV4106R

FJV4103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV3103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR73R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

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Datasheet: FJV3113R , FJV3114R , FJV3115R , FJV4101R , FJV4102R , FJV4103R , FJV4104R , FJV4105R , 2SC2482 , FJV4107R , FJV4108R , FJV4109R , FJV4110R , FJV4111R , FJV4112R , FJV4113R , FJV4114R .

History: 2SC3181O | MP8621 | KRC852U | 2SC692

Keywords - FJV4106R transistor datasheet

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