FJX3906 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJX3906
SMD Transistor Code: S2A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-323
FJX3906 Transistor Equivalent Substitute - Cross-Reference Search
FJX3906 Datasheet (PDF)
fjx3906.pdf
FJX39063General Purpose Transistor21SOT-323PNP Epitaxial Silicon Transistor1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCES Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage
fjx3904.pdf
January 2007FJX3904NPN Epitaxial Silicon Transistor General Purpose Transistor 3 21SOT-3231. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCES Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 200 mAPC Collector Power Dissipation 350
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
