All Transistors. FJY3004R Datasheet

 

FJY3004R Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJY3004R
   SMD Transistor Code: S04
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT-523F

 FJY3004R Transistor Equivalent Substitute - Cross-Reference Search

   

FJY3004R Datasheet (PDF)

 ..1. Size:248K  fairchild semi
fjy3004r.pdf

FJY3004R
FJY3004R

July 2007FJY3004RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJY4004REquivalent CircuitC CS04 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

 8.1. Size:252K  fairchild semi
fjy3002r.pdf

FJY3004R
FJY3004R

July 2007FJY3002RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJY4002REquivalent CircuitC CS02 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

 8.2. Size:250K  fairchild semi
fjy3001r.pdf

FJY3004R
FJY3004R

July 2007FJY3001RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJY4001REquivalent CircuitC CS01 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

 8.3. Size:250K  fairchild semi
fjy3005r.pdf

FJY3004R
FJY3004R

July 2007FJY3005RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJY4005REquivalent CircuitC CS05 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

 8.4. Size:253K  fairchild semi
fjy3008r.pdf

FJY3004R
FJY3004R

July 2007FJY3008RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJY4008REquivalent CircuitC CS08 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

 8.5. Size:250K  fairchild semi
fjy3006r.pdf

FJY3004R
FJY3004R

July 2007FJY3006RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJY4006REquivalent CircuitC CS06 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

 8.6. Size:251K  fairchild semi
fjy3007r.pdf

FJY3004R
FJY3004R

July 2007FJY3007RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJY4007REquivalent CircuitC CS07 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

 8.7. Size:252K  fairchild semi
fjy3003r.pdf

FJY3004R
FJY3004R

July 2007FJY3003RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJY4003REqiuvalent CircuitC CS03 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VV

 8.8. Size:245K  fairchild semi
fjy3009r.pdf

FJY3004R
FJY3004R

July 2007FJY3009RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJY4009REquivalent CircuitC CS09 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collect

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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