2N6325 Datasheet. Specs and Replacement
Type Designator: 2N6325 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO61
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2N6325 Substitution
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2N6325 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(... See More ⇒
isc Silicon NPN Power Transistor 2N6322 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Detailed specifications: 2N6318, 2N6319, 2N632, 2N6320, 2N6321, 2N6322, 2N6323, 2N6324, BD139, 2N6326, 2N6327, 2N6328, 2N6329, 2N633, 2N6330, 2N6331, 2N6338
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BJT Parameters and How They Relate
History: 2SA1576ART1 | 2N3815 | 2N6262 | NB212HG | BD249C | KRC121M | RN2502
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