FMB5551 Datasheet and Replacement
Type Designator: FMB5551
SMD Transistor Code: 3S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SSOT-6
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FMB5551 Datasheet (PDF)
fmb5551.pdf

FMB5551C2NPN General Purpose AmplifierE1C1SuperSOT-6 Surface Mount Package This device is designed for general purpose high voltage amplifiers and gas discharge display driving. B2E2 Sourced from process 16. B1pin #1 See MMBT5551 for characteristics.SuperSOTTM-6Mark: .3SDot denotes pin #1Absolute Maximum Ratings Ta=25C unless otherwise notedSymbol Pa
fmb5551.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2SC999A | RN1108ACT | BD434-25 | 2N1056 | UN9217R | KT8107D2 | ECG2306
Keywords - FMB5551 transistor datasheet
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History: 2SC999A | RN1108ACT | BD434-25 | 2N1056 | UN9217R | KT8107D2 | ECG2306



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