FMB5551 Specs and Replacement
Type Designator: FMB5551
SMD Transistor Code: 3S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SSOT-6
FMB5551 Substitution
- BJT ⓘ Cross-Reference Search
FMB5551 datasheet
FMB5551 C2 NPN General Purpose Amplifier E1 C1 SuperSOT-6 Surface Mount Package This device is designed for general purpose high voltage amplifiers and gas discharge display driving. B2 E2 Sourced from process 16. B1 pin #1 See MMBT5551 for characteristics. SuperSOTTM-6 Mark .3S Dot denotes pin #1 Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Pa... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FJY4010R, FJY4011R, FJY4012R, FJY4013R, FJY4014R, FJYF2906, FMB100, FMB200, S9013, FMB857B, FMBA06, FMBA14, FMBA56, FMBM5401, FMBM5551, FMBS5401, FMBS549
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