FMBA06 Datasheet and Replacement
Type Designator: FMBA06
SMD Transistor Code: 1G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSOT-6
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FMBA06 Datasheet (PDF)
fmba06.pdf

FMBA06C2E1C1B2E2B1pin #1SuperSOT-6Mark: .1GDot denotes pin #1NPN Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 300 mA. Sourced from Process 33.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | CXT7410 | BSV17-6 | KRA741U
Keywords - FMBA06 transistor datasheet
FMBA06 cross reference
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History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | CXT7410 | BSV17-6 | KRA741U



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