FMBA06 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMBA06
SMD Transistor Code: 1G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSOT-6
FMBA06 Transistor Equivalent Substitute - Cross-Reference Search
FMBA06 Datasheet (PDF)
fmba06.pdf
FMBA06C2E1C1B2E2B1pin #1SuperSOT-6Mark: .1GDot denotes pin #1NPN Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 300 mA. Sourced from Process 33.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: GT400-5D | BLV91 | BLX87 | 2SD65 | DDTA144GUA | KRC866E
History: GT400-5D | BLV91 | BLX87 | 2SD65 | DDTA144GUA | KRC866E
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050