FMBA14 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMBA14
SMD Transistor Code: 1N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.25 MHz
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: SSOT-6
FMBA14 Transistor Equivalent Substitute - Cross-Reference Search
FMBA14 Datasheet (PDF)
..1. Size:54K fairchild semi
fmba14.pdf
fmba14.pdf
FMBA14C2E1C1B2E2pin #1 B1SuperSOT-6Mark: .1NDot denotes pin #1NPN Multi-Chip Darlington TransistorThis device is designed for applications requiring extremely high currentgain at collector currents to 1.0 A. Sourced from Process 05.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 30 VVCBO Col
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
