FMBSA06 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMBSA06
SMD Transistor Code: 1G1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSOT-6
FMBSA06 Transistor Equivalent Substitute - Cross-Reference Search
FMBSA06 Datasheet (PDF)
fmbsa06.pdf
FMBSA06NCNPN General Purpose AmplifierC1 This device is designed for general purpose amplifier applications at Ecollector currents to 300 mA. Sourced from Process 12.BCCpin #1SuperSOTTM-6 singleMark: .1G1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 V
fmbsa56.pdf
FMBSA56NCPNP General Purpose AmplifierC1 This device is designed for general purpose amplifier applications at Ecollector currents to 300 mA. Sourced from Process 73.BCCpin #1SuperSOTTM-6 singleMark: .2G1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -80 VVCBO Collector-Base Voltage -80
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
